Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Yang H(杨辉)
|
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2014-08-01 |
| 卷号 | 564期号:0页码:135-139 |
| 关键词 | Carbon impurity Metalorganic chemical vapor deposition High-resistance gallium nitride High electron mobility transistors |
| 通讯作者 | Zhao, DG |
| 英文摘要 | GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH3) flux, growth temperature, trimethyl-gallium flux and H-2 flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 x 10(9) Omega center dot cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An AlxGa1-xN/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm(2)/Vs. (C) 2014 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000340852200017 |
| 公开日期 | 2014-12-02 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1635]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang H. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition[J]. THIN SOLID FILMS,2014,564(0):135-139. |
| APA | Yang H.(2014).Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition.THIN SOLID FILMS,564(0),135-139. |
| MLA | Yang H."Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition".THIN SOLID FILMS 564.0(2014):135-139. |
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