Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
文献类型：期刊论文
| 作者 | Yang, J ; Yang H(杨辉)
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2014-06 |
| 卷号 | 23期号:6 |
| 关键词 | nitride materials external quantum efficiency polarization p-type GaN resistivity |
| 通讯作者 | Zhao, DG |
| 英文摘要 | Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well (MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency (EQE) of the solar cells increases in a low energy spectral range (lambda > 370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths (lambda > 370 nm). |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000338668200103 |
| 公开日期 | 2014-12-08 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1661]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang, J,Yang H. Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells[J]. CHINESE PHYSICS B,2014,23(6). |
| APA | Yang, J,&Yang H.(2014).Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells.CHINESE PHYSICS B,23(6). |
| MLA | Yang, J,et al."Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells".CHINESE PHYSICS B 23.6(2014). |
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