中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet

文献类型:期刊论文

作者Li DY(李德尧); Wang HB(王怀兵); Liu JP(刘建平); Zhang SM(张书明)
刊名CHINESE SCIENCE BULLETIN
出版日期2014-06
卷号59期号:16页码:1903-1906
关键词InGaN Superluminescent diodes Gain saturation
通讯作者张书明
英文摘要We have fabricated InGaN-based superluminescent diodes (SLDs) with one-sided oblique facet. The characteristics of the SLDs and laser diodes with the same cavity length (800 mu m) were compared. The typical peak wavelength and the full width at half maximum of the spectrum in superluminescence regime are 445.3 and 7.7 nm for the SLDs with 800 mu m cavity length. The characteristics of the SLDs with different cavity length were also demonstrated in a comparative way. It is found that the gain of the InGaN multi-quantum wells in blue spectral range is a linear function of the current density below gain saturation region. The lasing threshold current turns out to be higher for the shorter SLD (S-SLD) (400 mu m), but the output light intensity of the longer SLD (800 mu m) is higher than that of the S-SLD under the same current density. The gain saturation phenomenon was observed in S-SLD when it was biased at a current density larger than 27.5 kA/cm(2). The increase of junction temperature was identified as the main reason for gain saturation through spectra analysis.
收录类别SCI
语种英语
WOS记录号WOS:000335658800018
公开日期2014-12-08
源URL[http://ir.sinano.ac.cn/handle/332007/1666]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Li DY,Wang HB,Liu JP,et al. Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet[J]. CHINESE SCIENCE BULLETIN,2014,59(16):1903-1906.
APA Li DY,Wang HB,Liu JP,&Zhang SM.(2014).Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet.CHINESE SCIENCE BULLETIN,59(16),1903-1906.
MLA Li DY,et al."Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet".CHINESE SCIENCE BULLETIN 59.16(2014):1903-1906.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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