Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films
文献类型：期刊论文
| 作者 | Zhang SM(张书明) ; Yang H(杨辉); Liu JP(刘建平); Yang, J
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| 刊名 | JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2014-04-28 |
| 卷号 | 115期号:16 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION YELLOW LUMINESCENCE INTERSTITIAL CARBON MOVPE GROWTH LAYERS |
| 通讯作者 | Zhao, DG |
| 英文摘要 | The influence of unintentionally doped carbon impurities on electrical resistivity and yellow luminescence (YL) of low-temperature (LT) grown Mg doped GaN films is investigated. It is found that the resistivity of Mg doped GaN films are closely related to the residual carbon impurity concentration, which may be attributed to the compensation effect of carbon impurities. The carbon impurity may preferentially form deep donor complex C-N-O-N resulting from its relatively low formation energy. This complex is an effective compensate center for Mg-Ga acceptors as well as inducing YL in photoluminescence spectra. Thus, the low resistivity LT grown p-type GaN films can be obtained only when the residual carbon impurity concentration is sufficiently low, which can explain why LT P-GaN films with lower resistivity were obtained more easily when relatively higher pressure, temperature, or NH3/TMGa flow rate ratio were used in the LT grown Mg doped GaN films reported in earlier reports. (C) 2014 AIP Publishing LLC. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000335228400034 |
| 公开日期 | 2014-12-19 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1708]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhang SM,Yang H,Liu JP,et al. Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films[J]. JOURNAL OF APPLIED PHYSICS,2014,115(16). |
| APA | Zhang SM,Yang H,Liu JP,&Yang, J.(2014).Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films.JOURNAL OF APPLIED PHYSICS,115(16). |
| MLA | Zhang SM,et al."Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films".JOURNAL OF APPLIED PHYSICS 115.16(2014). |
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