Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhou, K(周堃); Ikeda, M; Liu, JP(刘建平); Zhang, SM(张书明); Li, ZC(李增成); Feng, MX(冯美鑫); Tian, AQ(田爱琴); Wen, PY(温鹏雁); Li, DY(李德尧); Zhang, LQ(张立群) |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2015 |
| 卷号 | 409期号:0页码:51-55 |
| 关键词 | Growth models Metalorganic vapor phase epitaxy Nitrides Semiconducting III-V materials |
| 通讯作者 | Ikeda, M (Ikeda, Masao) |
| 英文摘要 |
InGaN strained bulk layers were grown by low-pressure metalorganic chemical
vapor deposition on c-plane GaN/sapphire templates. Two growth regimes, mass
transport limited regime and indium desorption regime, were examined for InGaN
growth. In the indium desorption regime, more indium source must be fed to keep a
constant indium content. In the indium desorption regime, we found an abnormally
enhanced GaN growth rate, which was proved to be related to the indium desorption
and dependent on the growth temperature and the indium source flow. Due to the
enhanced growth rate, the optical quality of In0.16Ga0.84N layers degraded
significantly. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2015-02-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1822]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhou, K,Ikeda, M,Liu, JP,et al. Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2015,409(0):51-55. |
| APA | Zhou, K.,Ikeda, M.,Liu, JP.,Zhang, SM.,Li, ZC.,...&Yang, H.(2015).Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,409(0),51-55. |
| MLA | Zhou, K,et al."Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 409.0(2015):51-55. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。