中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Identification of degradation mechanisms of blue InGaN/GaN laser diodes

文献类型:期刊论文

作者Wen, PY(温鹏雁); Zhang, SM(张书明); Li, DY(李德尧); Liu, JP(刘建平); Zhang, LQ(张立群); Zhou, K(周堃); Feng, MX(冯美鑫); Tian, AQ(田爱琴) Zhang, F(张峰); Gao, XD(高晓冬); Zeng, C(曾畅)
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2015
卷号48期号:41页码:4
关键词InGaN/GaN laser diode degradation mechanism optical characteristic
通讯作者Wen, PY (温鹏雁)
英文摘要A comprehensive analysis of the degradation mechanism of blue InGaN/GaN laser diodes (LDs) is carried out by investigating the electrical and optical characteristics. The increase in the leakage current as well as decrease in the slope efficiency is observed. The luminescence properties of the active region at different aging stages are studied by means of cathodoluminescence. Significant degradation of the active region is observed on the room temperature cathodoluminescence while the low temperature cathodoluminescence shows almost no degradation, indicating that the degradation of the LDs is due to generation of low temperature frozen point defects. Furthermore, the generation of the defects follows a kinetic mechanism enhanced by electron-hole non-radiative recombination which explains the acceleration of time degradation in our LDs.
收录类别SCI
语种英语
公开日期2016-05-03
源URL[http://ir.sinano.ac.cn/handle/332007/3290]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Wen, PY,Zhang, SM,Li, DY,et al. Identification of degradation mechanisms of blue InGaN/GaN laser diodes[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2015,48(41):4.
APA Wen, PY.,Zhang, SM.,Li, DY.,Liu, JP.,Zhang, LQ.,...&Yang, H.(2015).Identification of degradation mechanisms of blue InGaN/GaN laser diodes.JOURNAL OF PHYSICS D-APPLIED PHYSICS,48(41),4.
MLA Wen, PY,et al."Identification of degradation mechanisms of blue InGaN/GaN laser diodes".JOURNAL OF PHYSICS D-APPLIED PHYSICS 48.41(2015):4.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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