Identification of degradation mechanisms of blue InGaN/GaN laser diodes
文献类型:期刊论文
作者 | Wen, PY(温鹏雁); Zhang, SM(张书明); Li, DY(李德尧); Liu, JP(刘建平)![]() |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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出版日期 | 2015 |
卷号 | 48期号:41页码:4 |
关键词 | InGaN/GaN laser diode degradation mechanism optical characteristic |
通讯作者 | Wen, PY (温鹏雁) |
英文摘要 | A comprehensive analysis of the degradation mechanism of blue InGaN/GaN laser diodes (LDs) is carried out by investigating the electrical and optical characteristics. The increase in the leakage current as well as decrease in the slope efficiency is observed. The luminescence properties of the active region at different aging stages are studied by means of cathodoluminescence. Significant degradation of the active region is observed on the room temperature cathodoluminescence while the low temperature cathodoluminescence shows almost no degradation, indicating that the degradation of the LDs is due to generation of low temperature frozen point defects. Furthermore, the generation of the defects follows a kinetic mechanism enhanced by electron-hole non-radiative recombination which explains the acceleration of time degradation in our LDs. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2016-05-03 |
源URL | [http://ir.sinano.ac.cn/handle/332007/3290] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
推荐引用方式 GB/T 7714 | Wen, PY,Zhang, SM,Li, DY,et al. Identification of degradation mechanisms of blue InGaN/GaN laser diodes[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2015,48(41):4. |
APA | Wen, PY.,Zhang, SM.,Li, DY.,Liu, JP.,Zhang, LQ.,...&Yang, H.(2015).Identification of degradation mechanisms of blue InGaN/GaN laser diodes.JOURNAL OF PHYSICS D-APPLIED PHYSICS,48(41),4. |
MLA | Wen, PY,et al."Identification of degradation mechanisms of blue InGaN/GaN laser diodes".JOURNAL OF PHYSICS D-APPLIED PHYSICS 48.41(2015):4. |
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