Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure
文献类型：期刊论文
| 作者 | He, XG; Zhao, DG; Jiang, DS; Zhu, JJ; Chen, P; Liu, ZS; Le, LC; Yang, J; Li, XJ; Zhang, SM(张书明) |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2015 |
| 卷号 | 24期号:9页码:4 |
| 关键词 | high electron mobility transistor two-dimensional electron gas GaN |
| 通讯作者 | Zhao, DG |
| 英文摘要 | AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas (2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the high-temperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 x 10(13) cm(-2), electron mobility of 2101 cm(2).V-1.s(-1), and square resistance of 249 Omega is obtained. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3316]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | He, XG,Zhao, DG,Jiang, DS,et al. Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure[J]. CHINESE PHYSICS B,2015,24(9):4. |
| APA | He, XG.,Zhao, DG.,Jiang, DS.,Zhu, JJ.,Chen, P.,...&Yang, H.(2015).Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure.CHINESE PHYSICS B,24(9),4. |
| MLA | He, XG,et al."Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure".CHINESE PHYSICS B 24.9(2015):4. |
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