Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN
文献类型：期刊论文
| 作者 | Li,XJ; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; Yang, J; He, XG; Zhang, LQ(张立群) |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2015 |
| 卷号 | 24期号:9页码:5 |
| 关键词 | ohmic contact p-type GaN transportation mechanism deep-level-defect band |
| 通讯作者 | Zhao, DG |
| 英文摘要 | The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p(++)-GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I-V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p(++)-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p(++)-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97 x 10(-4) Omega.cm(2) is achieved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3317]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Li,XJ,Zhao, DG,Jiang, DS,et al. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN[J]. CHINESE PHYSICS B,2015,24(9):5. |
| APA | Li,XJ.,Zhao, DG.,Jiang, DS.,Chen, P.,Zhu, JJ.,...&Yang, H.(2015).Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN.CHINESE PHYSICS B,24(9),5. |
| MLA | Li,XJ,et al."Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN".CHINESE PHYSICS B 24.9(2015):5. |
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