Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions (vol 118, 033101, 2015)
文献类型：期刊论文
| 作者 | Zhang, F(张峰); Ikeda, M; Zhou, K(周堃); Liu, ZS; Liu, JP(刘建平) ; Zhang, SM(张书明); Yang, H(杨辉)
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| 刊名 | JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2015 |
| 卷号 | 118期号:8页码:1 |
| 通讯作者 | Ikeda, M |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3323]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhang, F,Ikeda, M,Zhou, K,et al. Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions (vol 118, 033101, 2015)[J]. JOURNAL OF APPLIED PHYSICS,2015,118(8):1. |
| APA | Zhang, F.,Ikeda, M.,Zhou, K.,Liu, ZS.,Liu, JP.,...&Yang, H.(2015).Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions (vol 118, 033101, 2015).JOURNAL OF APPLIED PHYSICS,118(8),1. |
| MLA | Zhang, F,et al."Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions (vol 118, 033101, 2015)".JOURNAL OF APPLIED PHYSICS 118.8(2015):1. |
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