Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage
文献类型：期刊论文
| 作者 | Shi, M; Chen, P; Zhao, DG; Jiang, DS; Zheng, J; Cheng, BW; Zhu, JJ; Liu, ZS; Liu, W; Li, X |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2015 |
| 卷号 | 24期号:5页码:5 |
| 关键词 | AlN field emission cold cathode negative electron affinity |
| 通讯作者 | Zhao, DG |
| 英文摘要 | The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride (AlN) thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC (0001) substrate at 1100 degrees C by metal organic chemical vapor deposition (MOCVD) under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/mu m and the maximum emission current density is 154 mA/cm(2) at 69.3 V for the Si-doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3378]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Shi, M,Chen, P,Zhao, DG,et al. Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage[J]. CHINESE PHYSICS B,2015,24(5):5. |
| APA | Shi, M.,Chen, P.,Zhao, DG.,Jiang, DS.,Zheng, J.,...&Yang, H.(2015).Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage.CHINESE PHYSICS B,24(5),5. |
| MLA | Shi, M,et al."Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage".CHINESE PHYSICS B 24.5(2015):5. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。