A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current
文献类型:期刊论文
作者 | Li, X; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Shi, M; Zhao, DM; Liu, W; Zhu, JJ; Zhang, SM(张书明) |
刊名 | SUPERLATTICES AND MICROSTRUCTURES
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出版日期 | 2015 |
卷号 | 80页码:7 |
关键词 | GaAs laser diodes Threshold current Divergence angle |
通讯作者 | Zhao, DG |
英文摘要 | The vertical divergence angle of GaAs-based laser diodes (LD) can be reduced by usually increasing waveguide thickness and inserting low index layers between waveguide layers and cladding layers, but it will also induce an increase of the threshold current. It is proposed to make the inserted low index interlayers doped and asymmetric to simultaneously reduce vertical divergence angle and alleviate the deterioration of threshold current. The simulation results indicate that the carrier leakage and injection are improved due to the change of energy band profile. The characteristics of newly designed laser structure indicate a satisfactory light beam quality and a relatively low threshold current density. (C) 2015 Elsevier Ltd. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
源URL | [http://ir.sinano.ac.cn/handle/332007/3400] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
推荐引用方式 GB/T 7714 | Li, X,Zhao, DG,Jiang, DS,et al. A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current[J]. SUPERLATTICES AND MICROSTRUCTURES,2015,80:7. |
APA | Li, X.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Yang, H.(2015).A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current.SUPERLATTICES AND MICROSTRUCTURES,80,7. |
MLA | Li, X,et al."A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current".SUPERLATTICES AND MICROSTRUCTURES 80(2015):7. |
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