中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current

文献类型:期刊论文

作者Li, X; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Shi, M; Zhao, DM; Liu, W; Zhu, JJ; Zhang, SM(张书明)
刊名SUPERLATTICES AND MICROSTRUCTURES
出版日期2015
卷号80页码:7
关键词GaAs laser diodes Threshold current Divergence angle
通讯作者Zhao, DG
英文摘要The vertical divergence angle of GaAs-based laser diodes (LD) can be reduced by usually increasing waveguide thickness and inserting low index layers between waveguide layers and cladding layers, but it will also induce an increase of the threshold current. It is proposed to make the inserted low index interlayers doped and asymmetric to simultaneously reduce vertical divergence angle and alleviate the deterioration of threshold current. The simulation results indicate that the carrier leakage and injection are improved due to the change of energy band profile. The characteristics of newly designed laser structure indicate a satisfactory light beam quality and a relatively low threshold current density. (C) 2015 Elsevier Ltd. All rights reserved.
收录类别SCI
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/3400]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Li, X,Zhao, DG,Jiang, DS,et al. A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current[J]. SUPERLATTICES AND MICROSTRUCTURES,2015,80:7.
APA Li, X.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Yang, H.(2015).A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current.SUPERLATTICES AND MICROSTRUCTURES,80,7.
MLA Li, X,et al."A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current".SUPERLATTICES AND MICROSTRUCTURES 80(2015):7.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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