中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness

文献类型:期刊论文

作者Liu, W; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Shi, M; Zhao, DM; Li, X; Liu, JP(刘建平)
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2015
卷号625页码:5
关键词Nitride materials Crystal growth Photoluminescence Multiple quantum wells Localization states Green light
通讯作者Zhao, DG
英文摘要Green light emitting InGaN/GaN multiple-quantum-well (MQW) structures with varying well thickness are grown via metal-organic chemical vapor deposition (MOCVD). The localization effect in these samples is studied by means of temperature-dependent photoluminescence (PL) measurements. The S-shape shift of PL peak energy with increasing temperature is observed, from which the extent of localization effect is determined quantitatively by using a band-tail model. It is found that the composition-related deep localization states dominate the light emission in thin-well MQWs, while in thick-well MQWs the shallow localization states induced by the fluctuations of InGaN well thickness dominate the luminescence efficiency. It is considered that in the thinner wells the improved emitting efficiency may partially originate from the stronger localization effect. (C) 2014 Elsevier B. V. All rights reserved.
收录类别SCI
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/3412]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Liu, W,Zhao, DG,Jiang, DS,et al. Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2015,625:5.
APA Liu, W.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Yang, H.(2015).Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness.JOURNAL OF ALLOYS AND COMPOUNDS,625,5.
MLA Liu, W,et al."Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness".JOURNAL OF ALLOYS AND COMPOUNDS 625(2015):5.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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