中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Band hybridization effect in InAs/GaSb based quantum wells

文献类型:期刊论文

作者Liu, LW(刘立伟)
刊名PHYSICS LETTERS A
出版日期2013-03-15
卷号377期号:9页码:727-730
关键词Type II quantum well Band hybridization Many-body effect Exchange self-energy Minigap
通讯作者Yang, CH
英文摘要We develop a simple way to investigate the band hybridization effect in the present of the many-body interactions in an InAs/GaSb based quantum wells with different widths. The exchange self-energy and energy gap are obtained analytically at the long wave limit. An electron-like and a hole-like dispersion relations were obtained and a minigap about several meV is observed at the intercross of the electron and hole dispersion relations. Our theoretical results show that the widths of the quantum well have crucial role on the band hybridization in such a system.
收录类别SCI
语种英语
WOS记录号WOS:000315314300013
公开日期2014-01-08
源URL[http://ir.sinano.ac.cn/handle/332007/1259]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘立伟团队
推荐引用方式
GB/T 7714
Liu, LW. Band hybridization effect in InAs/GaSb based quantum wells[J]. PHYSICS LETTERS A,2013,377(9):727-730.
APA Liu, LW.(2013).Band hybridization effect in InAs/GaSb based quantum wells.PHYSICS LETTERS A,377(9),727-730.
MLA Liu, LW."Band hybridization effect in InAs/GaSb based quantum wells".PHYSICS LETTERS A 377.9(2013):727-730.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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