Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices
文献类型:期刊论文
作者 | Li, WW (李伟伟)![]() ![]() |
刊名 | APPLIED PHYSICS LETTERS
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出版日期 | 2014 |
卷号 | 104期号:15 |
通讯作者 | Long, MS (龙明生) |
英文摘要 | We fabricated a vertical structure device, in which graphene is sandwiched between two asymmetric ferromagnetic electrodes. The measurements of electron and spin transport were performed across the combined channels containing the vertical and horizontal components. The presence of electron-electron interaction (EEI) was found not only at low temperatures but also at moderate temperatures up to similar to 120 K, and EEI dominates over weak localization (WL) with and without applying magnetic fields perpendicular to the sample plane. Moreover, spin valve effect was observed when magnetic filed is swept at the direction parallel to the sample surface. We attribute the EEI and WL surviving at a relatively high temperature to the effective suppress of phonon scattering in the vertical device structure. The findings open a way for studying quantum correlation at relatively high temperature. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000335145200062 |
公开日期 | 2015-02-03 |
源URL | [http://ir.sinano.ac.cn/handle/332007/1797] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘立伟团队 |
推荐引用方式 GB/T 7714 | Li, WW ,Liu, LW . Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices[J]. APPLIED PHYSICS LETTERS,2014,104(15). |
APA | Li, WW ,&Liu, LW .(2014).Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices.APPLIED PHYSICS LETTERS,104(15). |
MLA | Li, WW ,et al."Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices".APPLIED PHYSICS LETTERS 104.15(2014). |
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