中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices

文献类型:期刊论文

作者Li, WW (李伟伟); Liu, LW (刘立伟)
刊名APPLIED PHYSICS LETTERS
出版日期2014
卷号104期号:15
通讯作者Long, MS (龙明生)
英文摘要We fabricated a vertical structure device, in which graphene is sandwiched between two asymmetric ferromagnetic electrodes. The measurements of electron and spin transport were performed across the combined channels containing the vertical and horizontal components. The presence of electron-electron interaction (EEI) was found not only at low temperatures but also at moderate temperatures up to similar to 120 K, and EEI dominates over weak localization (WL) with and without applying magnetic fields perpendicular to the sample plane. Moreover, spin valve effect was observed when magnetic filed is swept at the direction parallel to the sample surface. We attribute the EEI and WL surviving at a relatively high temperature to the effective suppress of phonon scattering in the vertical device structure. The findings open a way for studying quantum correlation at relatively high temperature. 
收录类别SCI
语种英语
WOS记录号WOS:000335145200062
公开日期2015-02-03
源URL[http://ir.sinano.ac.cn/handle/332007/1797]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘立伟团队
推荐引用方式
GB/T 7714
Li, WW ,Liu, LW . Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices[J]. APPLIED PHYSICS LETTERS,2014,104(15).
APA Li, WW ,&Liu, LW .(2014).Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices.APPLIED PHYSICS LETTERS,104(15).
MLA Li, WW ,et al."Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices".APPLIED PHYSICS LETTERS 104.15(2014).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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