Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor
文献类型:期刊论文
作者 | B. S. Zhang (张宝顺)![]() ![]() ![]() ![]() ![]() ![]() ![]() |
刊名 | Applied Physics Letters
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出版日期 | 2012-04-23 |
卷号 | 100期号:17页码:173513 |
通讯作者 | H. Qin (秦华) |
英文摘要 | In our previous work [Sun et al., Appl. Phys. Lett. 100, 013506 (2012)], we inferred the existence of localized self-mixing in an antenna-coupled field-effect terahertz detector. In this Letter, we report a quasistatic self-mixing model taking into account the localized terahertz fields and its verification by comparing the simulated results with the experimental data in a two-dimensional space of the gate voltage and the drain/source bias. The model well describes the detector characteristics: not only the magnitude, but also the polarity, of the photocurrent can be tuned. The existence of strongly localized self-mixing in such detectors is confirmed. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-01-16 |
源URL | [http://58.210.77.100/handle/332007/911] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队 |
通讯作者 | H. Qin (秦华); H. Qin (秦华) |
推荐引用方式 GB/T 7714 | B. S. Zhang ,D. M. Wu ,Y. F. Sun ,et al. Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor[J]. Applied Physics Letters,2012,100(17):173513. |
APA | B. S. Zhang .,D. M. Wu .,Y. F. Sun .,Y. Cai .,H. Qin .,...&H. Qin .(2012).Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor.Applied Physics Letters,100(17),173513. |
MLA | B. S. Zhang ,et al."Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor".Applied Physics Letters 100.17(2012):173513. |
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