中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor

文献类型:期刊论文

作者B. S. Zhang (张宝顺); D. M. Wu (吴东岷); Y. F. Sun (孙云飞); Y. Cai (蔡勇); H. Qin (秦华); J. D. Sun (孙建东); H. Qin (秦华)
刊名Applied Physics Letters
出版日期2012-04-23
卷号100期号:17页码:173513
通讯作者H. Qin (秦华)
英文摘要
In our previous work [Sun et al., Appl. Phys. Lett. 100, 013506 (2012)], we inferred the existence of localized self-mixing in an antenna-coupled field-effect terahertz detector. In this Letter, we report a quasistatic self-mixing model taking into account the localized terahertz fields and its verification by comparing the simulated results with the experimental data in a two-dimensional space of the gate voltage and the drain/source bias. The model well describes the detector characteristics: not only the magnitude, but also the polarity, of the photocurrent can be tuned. The existence of strongly localized self-mixing in such detectors is confirmed.
收录类别SCI
语种英语
公开日期2013-01-16
源URL[http://58.210.77.100/handle/332007/911]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队
通讯作者H. Qin (秦华); H. Qin (秦华)
推荐引用方式
GB/T 7714
B. S. Zhang ,D. M. Wu ,Y. F. Sun ,et al. Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor[J]. Applied Physics Letters,2012,100(17):173513.
APA B. S. Zhang .,D. M. Wu .,Y. F. Sun .,Y. Cai .,H. Qin .,...&H. Qin .(2012).Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor.Applied Physics Letters,100(17),173513.
MLA B. S. Zhang ,et al."Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor".Applied Physics Letters 100.17(2012):173513.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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