High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor
文献类型：期刊论文
| 作者 | B. S. Zhang (张宝顺) ; J. D. Sun (孙建东); Y. Cai (蔡勇); H. Qin (秦华); Y. F. Sun (孙云飞)
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| 刊名 | APPLIED PHYSICS LETTERS
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| 出版日期 | 2012-01-02 |
| 卷号 | 100期号:1 |
| 英文摘要 | Using only optical lithography, we have fabricated a GaN/AlGaN high-electron mobility transistor with distinctive source and drain antennas electrically isolated from the electron channel. Working at room temperature, it efficiently detects terahertz radiation via self-mixing, with a responsivity (3.6 kV/W) exceptionally high for a III-V device and with a noise (40pW/ ) just above the thermal limit. Performance improves at 77 K. While the device itself is micrometer-sized, our modeling indicates the asymmetric antennas induce a rather localized (<200 nm) region of strong self-mixing. Thus, a nanometer-scale active region is achieved by design and without recourse to electron-beam lithography |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000298966200077 |
| 公开日期 | 2013-01-25 |
| 源URL | [http://58.210.77.100/handle/332007/1095]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 苏州纳米技术与纳米仿生研究所_纳米研究国际实验室_吴东岷团队 |
| 推荐引用方式 GB/T 7714 | B. S. Zhang ,J. D. Sun ,Y. Cai ,et al. High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor[J]. APPLIED PHYSICS LETTERS,2012,100(1). |
| APA | B. S. Zhang ,J. D. Sun ,Y. Cai ,H. Qin ,&Y. F. Sun .(2012).High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor.APPLIED PHYSICS LETTERS,100(1). |
| MLA | B. S. Zhang ,et al."High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor".APPLIED PHYSICS LETTERS 100.1(2012). |
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