Analytical I-V model and numerical analysis of single electron transistor
文献类型：期刊论文
| 作者 | Qin, H(秦华)
|
| 刊名 | ACTA PHYSICA
 |
| 出版日期 | 2013-04 |
| 卷号 | 62期号:7 |
| 关键词 | single electron transistor analytical model Monte Carlo master equation |
| 通讯作者 | Gu, XF* |
| 英文摘要 | The analytical I-V model of single electron transistor has been established and simulated by combining the Monte Carlo method with the Master Equation method. Effects of gate voltage, drain voltage, temperature, and tunneling junction resistance on electrical characteristics of a single electron transistor are analyzed. Simulation results indicate that for the device with symmetrical tunneling junction structure, the Coulomb staircases shift with increasing gate voltage, and the Coulomb oscillation amplitude increases with increasing drain voltage, while the Coulomb gaps decrease. The Coulomb staircases and the Coulomb oscillation disappear gradually with increasing temperature. The Coulomb blockade effects become more significant when the resistance ratio of the two asymmetrical tunneling junctions increases. |
| 收录类别 | SCI ; EI |
| 语种 | 中文 |
| WOS记录号 | WOS:000318151300058 |
| 公开日期 | 2014-01-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1195]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队 |
| 推荐引用方式 GB/T 7714 | Qin, H. Analytical I-V model and numerical analysis of single electron transistor[J]. ACTA PHYSICA,2013,62(7). |
| APA | Qin, H.(2013).Analytical I-V model and numerical analysis of single electron transistor.ACTA PHYSICA,62(7). |
| MLA | Qin, H."Analytical I-V model and numerical analysis of single electron transistor".ACTA PHYSICA 62.7(2013). |
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