Modeling a radio-frequency single-electron-transistor scanning probe
文献类型：期刊论文
| 作者 | Qin H(秦华) ; Li XX(李欣幸); Sun JD(孙建东)
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| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2014-08 |
| 卷号 | 53期号:8 |
| 关键词 | QUANTUM-DOT NOISE LIMIT MICROSCOPY |
| 通讯作者 | Lu, L |
| 英文摘要 | Single-electron transistors (SETs) are ultra-sensitive charge sensors. Aiming to develop a radio-frequency single-electron-transistor (RF-SET) scanning probe system, we build a complete device/circuit model to evaluate the charge sensitivity and the spatial resolution. Simulations of a gedunken experiment in which a silicon RF-SET probe scans a nanowire device suggest a charge sensitivity in the order of 10(-5)-10(-3) e/Hz(1/2) and a spatial resolution better than 100 nm. The dynamic range and the linearity of the scanning probe are also discussed. The model would provide a quantitative interpretation for future real imaging experiment and an operation guidance for a realistic RF-SET scanning probe system. (C) 2014 The Japan Society of Applied Physics |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000341479100016 |
| 公开日期 | 2014-12-02 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1633]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队 |
| 推荐引用方式 GB/T 7714 | Qin H,Li XX,Sun JD. Modeling a radio-frequency single-electron-transistor scanning probe[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2014,53(8). |
| APA | Qin H,Li XX,&Sun JD.(2014).Modeling a radio-frequency single-electron-transistor scanning probe.JAPANESE JOURNAL OF APPLIED PHYSICS,53(8). |
| MLA | Qin H,et al."Modeling a radio-frequency single-electron-transistor scanning probe".JAPANESE JOURNAL OF APPLIED PHYSICS 53.8(2014). |
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