Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor
文献类型：期刊论文
| 作者 | Zhang, XY(张晓渝); Tan, RB(谭仁兵); Sun, JD(孙建东); Li, XX(李欣幸); Zhou, Y(周宇); Lu, L(吕利); Qin, H(秦华)
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| 刊名 | CHINESE PHYSICS B
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| 出版日期 | 2015 |
| 卷号 | 24期号:10页码:4 |
| 关键词 | radio-frequency circuit high electron mobility transistor |
| 通讯作者 | Zhang, XY (张哓渝) |
| 英文摘要 | An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V-g, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3298]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队 |
| 推荐引用方式 GB/T 7714 | Zhang, XY,Tan, RB,Sun, JD,et al. Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor[J]. CHINESE PHYSICS B,2015,24(10):4. |
| APA | Zhang, XY.,Tan, RB.,Sun, JD.,Li, XX.,Zhou, Y.,...&Qin, H.(2015).Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor.CHINESE PHYSICS B,24(10),4. |
| MLA | Zhang, XY,et al."Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor".CHINESE PHYSICS B 24.10(2015):4. |
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