中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Room-temperature terahertz detection based on CVD graphene transistor

文献类型:期刊论文

作者Yang, XX(杨昕昕); Sun, JD(孙建东); Qin, H(秦华); Lv, L(吕利); Su, LN(苏丽娜); Yan, B(闫博); Li, XX(李欣幸); Zhang, ZP(张志鹏); Fang, JY(方靖岳)
刊名CHINESE PHYSICS B
出版日期2015
卷号24期号:4页码:5
关键词graphene field effect transistor self-mixing terahertz detection
通讯作者Qin, H (秦华)
英文摘要We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz(1/2). Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.
收录类别SCI
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/3394]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队
推荐引用方式
GB/T 7714
Yang, XX,Sun, JD,Qin, H,et al. Room-temperature terahertz detection based on CVD graphene transistor[J]. CHINESE PHYSICS B,2015,24(4):5.
APA Yang, XX.,Sun, JD.,Qin, H.,Lv, L.,Su, LN.,...&Fang, JY.(2015).Room-temperature terahertz detection based on CVD graphene transistor.CHINESE PHYSICS B,24(4),5.
MLA Yang, XX,et al."Room-temperature terahertz detection based on CVD graphene transistor".CHINESE PHYSICS B 24.4(2015):5.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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