Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs
文献类型：期刊论文
| 作者 | Baoshun Zhang（张宝顺） ; Yong Cai（蔡勇）; Yong Cai（蔡勇）; Wenhua Shi（时文华）; Chunhong Zeng（曾春红）; Hua Qin（秦华）
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| 刊名 | Phys. Status Solidi C
 |
| 出版日期 | 2012-03 |
| 卷号 | 9期号:3页码:879–882 |
| 关键词 | AlGaN/GaN HEMT nano-channel array E-mode threshold voltage |
| 通讯作者 | Yong Cai（蔡勇） |
| 英文摘要 | In this paper, we demonstrate a nano-channel array (NCA) structure to realize the control of threshold voltage (Vth) of AlGaN/GaN HEMTs. The fabricated NCA structure consists of multiple nano-channels parallelly connected together. Using this structure, the Vth of AlGaN/GaN HEMTs can be systematically shifted from -3.92 V for a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 0.15 V for an enhancement-mode (E-mode) AlGaN/GaN HEMT. Besides, an optimum maximum peak transconductance of 235 mS/mm was achieved at the nano-channel width of 224 nm, which is almost two times larger than that of C-HEMT (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-01-16 |
| 源URL | [http://58.210.77.100/handle/332007/908]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 |
| 通讯作者 | Yong Cai（蔡勇）; Yong Cai（蔡勇） |
| 推荐引用方式 GB/T 7714 | Baoshun Zhang,Yong Cai,Yong Cai,et al. Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs[J]. Phys. Status Solidi C,2012,9(3):879–882. |
| APA | Baoshun Zhang,Yong Cai,Yong Cai,Wenhua Shi,Chunhong Zeng,&Hua Qin.(2012).Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs.Phys. Status Solidi C,9(3),879–882. |
| MLA | Baoshun Zhang,et al."Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs".Phys. Status Solidi C 9.3(2012):879–882. |
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