Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells
文献类型：期刊论文
| 作者 | Chen, G; Wang, XQ; Fu, K (付凯); Rong, X; Hashimoto, H; Zhang, BS (张宝顺); Xu, FJ; Tang, N; Yoshikawa, A; Ge, WK |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2014-04-28 |
| 卷号 | 104期号:7 |
| 关键词 | PHOTODETECTOR |
| 通讯作者 | Wang, XQ |
| 英文摘要 | Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4 mu m, which shows potential applications on near infrared detection. (C) 2014 AIP Publishing LLC. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000336142500040 |
| 公开日期 | 2014-12-19 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1705]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 |
| 推荐引用方式 GB/T 7714 | Chen, G,Wang, XQ,Fu, K ,et al. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells[J]. APPLIED PHYSICS LETTERS,2014,104(7). |
| APA | Chen, G.,Wang, XQ.,Fu, K .,Rong, X.,Hashimoto, H.,...&Shen, B.(2014).Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells.APPLIED PHYSICS LETTERS,104(7). |
| MLA | Chen, G,et al."Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells".APPLIED PHYSICS LETTERS 104.7(2014). |
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