Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio
文献类型：期刊论文
| 作者 | Cai, Y (蔡勇)
|
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 35期号:12页码:1200-1202 |
| 关键词 | Post-gate annealing (PGA) GaN enhancement mode MOSFET ON/OFF current ratio mesa isolation current |
| 通讯作者 | Xu, Z (Xu, Zhe) |
| 英文摘要 | Postgate annealing (PGA) in N-2/O-2 atmosphere at 300 degrees C for various annealing time is performed on enhancement mode AlGaN/GaN MOSFET fabricated using a self-terminating gate recess etching technique. After 45-min annealing, the device OFF-state leakage current decreases by more than two orders of magnitude and thus a low OFF-state leakage current of similar to 10(-13) A/mm is obtained at room temperature, resulting in an excellent ON/OFF current ratio of similar to 10(12). At 250 degrees C, the device still exhibits a low OFF-state leakage current of similar to 10(-9) A/mm and high ON/OFF current ratio of similar to 10(8). Meanwhile, a strong correlation between the OFF-state leakage current and mesa isolation current is observed as we change the annealing time: 1) the lower the mesa isolation current and 2) the lower the OFF-state leakage current and thus the higher the ON/OFF current ratio. It is the suppression of the mesa isolation current owing to the passivation of atomic layer deposition Al2O3 that leads to the improvement of the OFF-state leakage current and ON/OFF current ratio after PGA. Besides, the device shows no obvious change in terms of its threshold voltage and maximum drain current after PGA. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000345575400013 |
| 公开日期 | 2015-02-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1834]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 |
| 推荐引用方式 GB/T 7714 | Cai, Y . Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio[J]. IEEE ELECTRON DEVICE LETTERS,2014,35(12):1200-1202. |
| APA | Cai, Y .(2014).Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio.IEEE ELECTRON DEVICE LETTERS,35(12),1200-1202. |
| MLA | Cai, Y ."Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio".IEEE ELECTRON DEVICE LETTERS 35.12(2014):1200-1202. |
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