Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
文献类型：期刊论文
| 作者 | Hua, MY; Liu, C; Yang, S; Liu, SH; Fu, K; Dong, ZH; Cai, Y(蔡勇); Zhang, BS(张宝顺) ; Chen, KJ
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| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
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| 出版日期 | 2015 |
| 卷号 | 62期号:10页码:8 |
| 关键词 | Gallium nitride gate dielectric low-pressure chemical vapor deposition (LPCVD) silicon nitride |
| 通讯作者 | Hua, MY |
| 英文摘要 | In this paper, we systematically investigated the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures. The LPCVD-SiNx gate dielectric exhibits low leakage and high breakdown electric field. The dominant mechanism of the leakage current through LPCVD-SiNx gate dielectric is identified to be Poole-Frenkel emission at low electric field and Fowler-Nordheim tunneling at high electric field. Both electric-field-accelerated and temperature-accelerated time-dependent dielectric breakdown of the LPCVD-SiNx gate dielectric were also investigated. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-05-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3302]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 |
| 推荐引用方式 GB/T 7714 | Hua, MY,Liu, C,Yang, S,et al. Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015,62(10):8. |
| APA | Hua, MY.,Liu, C.,Yang, S.,Liu, SH.,Fu, K.,...&Chen, KJ.(2015).Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs.IEEE TRANSACTIONS ON ELECTRON DEVICES,62(10),8. |
| MLA | Hua, MY,et al."Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs".IEEE TRANSACTIONS ON ELECTRON DEVICES 62.10(2015):8. |
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