Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites
文献类型：期刊论文
| 作者 | Cheng Guosheng(程国胜) ; Cheng Guosheng(程国胜)
|
| 刊名 | CRYSTENGCOMM
 |
| 出版日期 | 2011-01 |
| 卷号 | 13期号:11页码:3649-3652 |
| 关键词 | SELECTIVE-AREA GROWTH FUNDAMENTAL-BAND GAP NANOWIRE GROWTH INN EMISSION PHOTOLUMINESCENCE SURFACE |
| 通讯作者 | Cheng Guosheng(程国胜) |
| 英文摘要 | Indium nitride crystallites were grown via combination of vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanisms using Au nanoparticles as catalysts. A surface diffusion model was proposed to interpret the formation mechanism of the InN crystallites. Facets of InN crystallites were tunable with variation of NH(3) flux. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000290685000004 |
| 公开日期 | 2012-08-24 |
| 源URL | [http://58.210.77.100/handle/332007/621]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米生物医学与安全研究部_程国胜团队 |
| 通讯作者 | Cheng Guosheng(程国胜); Cheng Guosheng(程国胜) |
| 推荐引用方式 GB/T 7714 | Cheng Guosheng,Cheng Guosheng. Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites[J]. CRYSTENGCOMM,2011,13(11):3649-3652. |
| APA | Cheng Guosheng,&Cheng Guosheng.(2011).Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites.CRYSTENGCOMM,13(11),3649-3652. |
| MLA | Cheng Guosheng,et al."Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites".CRYSTENGCOMM 13.11(2011):3649-3652. |
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