Controllable growth of InN nanostructures (Invited Review)
文献类型：期刊论文
| 作者 | Tao Kong(孔涛) ; Guosheng Cheng(程国胜); Guosheng Cheng(程国胜)
|
| 刊名 | Journal of Nanoengineering and Nanomanufacturing
 |
| 出版日期 | 2012 |
| 卷号 | 22期号:2页码:112–122 |
| 关键词 | Vapor–Liquid–Solid Growth Nanostructure Surface Adatoms Diffusion. |
| 通讯作者 | Guosheng Cheng(程国胜) |
| 英文摘要 | In this review, we take a survey of synthesis approaches and growth mechanisms of one-dimensional (1D) InN nanostructures in a controlled manner. InN nanostructures with hexagonal wurtzite single-crystalline structures using chemical vapor deposition (CVD) technique are discussed herein. Firstly, we attempt to overview novel growth approaches for a controllable synthesis of InN nanostructures, focusing on vapor–liquid–solid (VLS) and vapor–solid (VS) mechanisms with different starting materials. In second section, we address the factors influencing InN growth directions, including 0001 , 10¯10 and 0¯111 . Finally, we present a systematically analysis of intriguing morphologies such as nanowires, nano-cones, and crystallites with a great yield. KEYWORDS: Vapor–Liquid–Solid Growth, Nanostructure, Surface Adatoms Diffusion. |
| 语种 | 英语 |
| 公开日期 | 2013-01-22 |
| 源URL | [http://58.210.77.100/handle/332007/977]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米生物医学与安全研究部_程国胜团队 |
| 通讯作者 | Guosheng Cheng(程国胜); Guosheng Cheng(程国胜) |
| 推荐引用方式 GB/T 7714 | Tao Kong,Guosheng Cheng,Guosheng Cheng. Controllable growth of InN nanostructures (Invited Review)[J]. Journal of Nanoengineering and Nanomanufacturing,2012,22(2):112–122. |
| APA | Tao Kong,Guosheng Cheng,&Guosheng Cheng.(2012).Controllable growth of InN nanostructures (Invited Review).Journal of Nanoengineering and Nanomanufacturing,22(2),112–122. |
| MLA | Tao Kong,et al."Controllable growth of InN nanostructures (Invited Review)".Journal of Nanoengineering and Nanomanufacturing 22.2(2012):112–122. |
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