Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application
文献类型：期刊论文
| 作者 | Cheng, GS*(程国胜) ; Kong, T(孔涛); Shi, L(石林)
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| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013-10 |
| 卷号 | 103期号:18 |
| 通讯作者 | Cheng, GS*(程国胜) |
| 英文摘要 | Amorphous thermal stability of Al-doped Sb2Te3 films was investigated by high-temperature X-ray diffraction from room temperature to 350 degrees C, showing the structural evolution step by step from amorphous to crystalline phases. The films' crystallization temperatures were elevated from 124 degrees C to 244 degrees C with increasing Al concentrations, resulting in significant improvement of their thermal stability. Formations of Al-Sb and Al-Te bonds in doped films were revealed and further re-validated by ab initio calculation, indicating that Al atoms bonded to Sb and Te atoms to suppress the phase transformation from amorphous to crystalline states. (c) 2013 AIP Publishing LLC. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000327816000064 |
| 公开日期 | 2014-01-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1192]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米生物医学与安全研究部_程国胜团队 |
| 通讯作者 | Cheng, GS*(程国胜) |
| 推荐引用方式 GB/T 7714 | Cheng, GS*,Kong, T,Shi, L. Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application[J]. APPLIED PHYSICS LETTERS,2013,103(18). |
| APA | Cheng, GS*,Kong, T,&Shi, L.(2013).Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application.APPLIED PHYSICS LETTERS,103(18). |
| MLA | Cheng, GS*,et al."Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application".APPLIED PHYSICS LETTERS 103.18(2013). |
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