Bi doping modulating structure and phase-change properties of GeTe nanowires
文献类型：期刊论文
| 作者 | Shi, L(石林) ; Cheng, GS(程国胜); Kong, T(孔涛)
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013-02-11 |
| 卷号 | 102期号:6 |
| 通讯作者 | Kong, T(孔涛) |
| 英文摘要 | Bi-doped GeTe nanowires were fabricated using chemical vapor deposition. Composition and microstructure characterizations indicated that Bi (∼3 at. %) doping preserved GeTe rhombohedral structure with slight X-ray diffraction peak shifts, implying material parameters variation. A doping model was proposed where three Bi atoms replaced the middle adjacentGe sites of (001) plane, accompanied by two adjacent Ge vacancies right over Bi atoms. Ab initio calculations re-validated cell parameters change. Furthermore, Bi-doping process resulted in crystalline and amorphous state resistances increased by ∼2 orders, while a crystallization time dramatically reduced down to 50 μs, 20 times shorter compared to undopednanowires. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000315053300075 |
| 公开日期 | 2014-01-08 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1260]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米生物医学与安全研究部_程国胜团队 |
| 通讯作者 | Kong, T(孔涛) |
| 推荐引用方式 GB/T 7714 | Shi, L,Cheng, GS,Kong, T. Bi doping modulating structure and phase-change properties of GeTe nanowires[J]. APPLIED PHYSICS LETTERS,2013,102(6). |
| APA | Shi, L,Cheng, GS,&Kong, T.(2013).Bi doping modulating structure and phase-change properties of GeTe nanowires.APPLIED PHYSICS LETTERS,102(6). |
| MLA | Shi, L,et al."Bi doping modulating structure and phase-change properties of GeTe nanowires".APPLIED PHYSICS LETTERS 102.6(2013). |
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