Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors
文献类型：期刊论文
| 作者 | Kong T(孔涛) ; Cheng GS(程国胜)
|
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2014-06 |
| 卷号 | 24期号:23页码:3581-3586 |
| 关键词 | nanowires photodetectors surface Se vacancies |
| 通讯作者 | 黄荣 |
| 英文摘要 | High-quality single-crystalline ternary (Sb1-xBix)(2)Se-3 nanowires (NWs) (x = 0-0.88) are synthesized by chemical vapor deposition. Nanowires with x from 0 to 0.75 are indexed as an orthorhombic structure. With increasing Bi incorporation ratio, (Sb1-xBix)(2)Se-3 NWs exhibit remarkable photoresponsivities, which originate from growing surface Se vacancies and augmented oxygen chemisorptions. Notably, spectra responsivity and external quantum efficiency of an (Sb0.44Bi0.56)(2)Se-3 NW photodetector reach as high as approximate to 8261.4 A/W and approximate to 1.6 x 10(6) %, respectively. Those excellent performances unambiguously demonstrate that Sb-Bi-Se NWs are promising for the utilizations of high-sensitivity and high-speed photodetectors and photoelectronic switches. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000337484300013 |
| 公开日期 | 2014-12-08 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1663]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米生物医学与安全研究部_程国胜团队 |
| 推荐引用方式 GB/T 7714 | Kong T,Cheng GS. Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors[J]. ADVANCED FUNCTIONAL MATERIALS,2014,24(23):3581-3586. |
| APA | Kong T,&Cheng GS.(2014).Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors.ADVANCED FUNCTIONAL MATERIALS,24(23),3581-3586. |
| MLA | Kong T,et al."Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors".ADVANCED FUNCTIONAL MATERIALS 24.23(2014):3581-3586. |
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