中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

文献类型:期刊论文

作者Tian, H (Tian, He) ; Yang, Y (Yang, Yi) ; Xie, D (Xie, Dan) ; Cui, YL (Cui, Ya-Long) ; Mi, WT (Mi, Wen-Tian) ; Zhang, YG (张跃钢) ; Ren, TL (Ren, Tian-Ling)
刊名SCIENTIFIC REPORTS
出版日期2014
卷号4期号:0
关键词PHOTODETECTORS TRANSPARENT TRANSISTORS
通讯作者Zhang, YG (张跃钢)
英文摘要In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices.
收录类别SCI
语种英语
WOS记录号WOS:000329839000006
公开日期2015-02-03
源URL[http://ir.sinano.ac.cn/handle/332007/1759]  
专题苏州纳米技术与纳米仿生研究所_纳米研究国际实验室_张跃钢团队
推荐引用方式
GB/T 7714
Tian, H ,Yang, Y ,Xie, D ,et al. Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices[J]. SCIENTIFIC REPORTS,2014,4(0).
APA Tian, H .,Yang, Y .,Xie, D .,Cui, YL .,Mi, WT .,...&Ren, TL .(2014).Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices.SCIENTIFIC REPORTS,4(0).
MLA Tian, H ,et al."Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices".SCIENTIFIC REPORTS 4.0(2014).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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