Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric
文献类型：期刊论文
| 作者 | Zhang, YH(张耀辉)
|
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2013-06 |
| 卷号 | 34期号:6页码:738-740 |
| 关键词 | AlGaN/GaN cutoff frequency metal oxide semiconductor high electron mobility transistor (MOSHEMT) thermal oxidized TiO2 |
| 通讯作者 | Meng, D |
| 英文摘要 | AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) with thick (>35 nm), high-kappa (TiO2/NiO), submicrometer-footprint (0.4 mu m) gate dielectric are found to exhibit two orders of magnitude in lower gate leakage current (similar to 1 nA/mm up to +3-V applied gate bias), higher I-MAX (709 mA/mm), and higher drain breakdown voltage, compared to Schottky barrier (SB) HEMTs of the same geometry. The maximum extrinsic transconductance of both the MOSHEMTs and the SBHEMTs with 2 x 80-mu m gate fingers is measured to be 149 mS/mm. The addition of the submicrometer-footprint gate oxide layer only results in a small reduction of the current gain cutoff frequency (21 versus 25 GHz, derived from S-parameter test data) because of the high permittivity (kappa approximate to 100) of the gate dielectric. This high-performance submicrometer-footprint MOSHEMT is highly promising for microwave power amplifier applications in communication and radar systems. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000319460800007 |
| 公开日期 | 2014-01-15 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1365]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_系统集成与IC设计部_张耀辉团队 |
| 推荐引用方式 GB/T 7714 | Zhang, YH. Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric[J]. IEEE ELECTRON DEVICE LETTERS,2013,34(6):738-740. |
| APA | Zhang, YH.(2013).Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric.IEEE ELECTRON DEVICE LETTERS,34(6),738-740. |
| MLA | Zhang, YH."Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric".IEEE ELECTRON DEVICE LETTERS 34.6(2013):738-740. |
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