Chemical vapor deposition growth of few-layer graphene for transparent conductive films
文献类型:期刊论文
作者 | Pu, J(濮军); Tang, L(唐磊); Li, CW(李朝威); Li, TT(李涛涛); Ling, L(凌琳); Zhang, K(张凯); Li, QW(李清文)![]() ![]() |
刊名 | RSC ADVANCES
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出版日期 | 2015 |
卷号 | 5期号:55页码:7 |
通讯作者 | Yao, YG (姚亚刚) |
英文摘要 | The layer numbers of graphene for graphene based transparent conductive films are crucial. An appropriate number of graphene layers would provide excellent electrical conductivity along with high transparency. Herein, we demonstrated a facile and scalable technique to grow graphene with controllable layers on copper foil substrates using the etching effect of H-2 in atmospheric pressure chemical vapor deposition (APCVD), and studied the influence of H-2 etching on the properties of graphene transparent conductive films. The etching of formed multi-layer graphene (MLG, 12-14 layers) for Cu substrates assists the formation of few-layer graphene (FLG, 2-3 layers). These as-obtained graphene can be used as high performance transparent conductors, which show improved tradeoff between conductivity and transparency: the transmittance of 96.4% at 550 nm with sheet resistance of similar to 360 Omega sq(-1), and the transmittance of 86.7% at 550 nm with sheet resistance of similar to 142 Omega sq(-1). They could be used as high performance transparent conductors in the future. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2016-05-03 |
源URL | [http://ir.sinano.ac.cn/handle/332007/3476] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_先进材料研究部_姚亚刚团队 |
推荐引用方式 GB/T 7714 | Pu, J,Tang, L,Li, CW,et al. Chemical vapor deposition growth of few-layer graphene for transparent conductive films[J]. RSC ADVANCES,2015,5(55):7. |
APA | Pu, J.,Tang, L.,Li, CW.,Li, TT.,Ling, L.,...&Yao, YG.(2015).Chemical vapor deposition growth of few-layer graphene for transparent conductive films.RSC ADVANCES,5(55),7. |
MLA | Pu, J,et al."Chemical vapor deposition growth of few-layer graphene for transparent conductive films".RSC ADVANCES 5.55(2015):7. |
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