Polymer/porous GaN bulk heterojunction and its optoelectronic property
文献类型：期刊论文
| 作者 | Pan GB(潘革波) ; Wang FX(王凤霞)
|
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2014-09-30 |
| 卷号 | 314期号:0页码:464-467 |
| 关键词 | Porous gallium nitride Poly(3-hexylthiophene Heterojunction Electrical properties |
| 通讯作者 | 潘革波 |
| 英文摘要 | A bulk heterojunction of poly(3-hexylthiophene) (P3HT) and porous gallium nitride (PGaN) was formed by a facile solution process. Raman spectra indicated that no chemical modification occurred between P3HT and PGaN. Compared with pristine GaN film, PGaN exhibited a substantial enhancement of photoluminescence (PL) intensity. PL spectra also revealed that the excitonic emission and recombination were partially quenched at the P3HT/PGaN interface. Furthermore, prototype devices were fabricated on the basis of P3HT/PGaN heterojunction and exhibited obvious rectifying and photoresponse properties in dark and under ultraviolet light illumination. (C) 2014 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000341464100063 |
| 公开日期 | 2014-12-01 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1627]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队 |
| 推荐引用方式 GB/T 7714 | Pan GB,Wang FX. Polymer/porous GaN bulk heterojunction and its optoelectronic property[J]. APPLIED SURFACE SCIENCE,2014,314(0):464-467. |
| APA | Pan GB,&Wang FX.(2014).Polymer/porous GaN bulk heterojunction and its optoelectronic property.APPLIED SURFACE SCIENCE,314(0),464-467. |
| MLA | Pan GB,et al."Polymer/porous GaN bulk heterojunction and its optoelectronic property".APPLIED SURFACE SCIENCE 314.0(2014):464-467. |
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