Electrochemical deposition of copper on single-crystal gallium nitride(0001) electrode: nucleation and growth mechanism
文献类型：期刊论文
| 作者 | Pan GB(潘革波)
|
| 刊名 | ELECTROCHIMICA ACTA
 |
| 出版日期 | 2014-06-01 |
| 卷号 | 130期号:0页码:537-542 |
| 关键词 | copper electrodeposition gallium nitride(0001) nucleation and growth semiconductor electrode |
| 通讯作者 | 潘革波 |
| 英文摘要 | The electrodeposition of Cu on n-type single-crystal GaN(0001) electrode from sulfate solution was investigated by electrochemical techniques and scanning electron microscopy. It was found that Cu deposition on GaN(0001) commenced at a large negative potential of -840 mV vs. Pt/Pt2+ and was quasi-reversible and mass transfer limited. On the basis of Tafel plot, a low exchange current density of similar to 2.3 x 10(-6) mA cm(-2) was calculated. This was mainly due to the limited free electrons in the conduction band of GaN. In addition, the current transient measurements revealed that the deposition process followed the progressive nucleation in 0.5 M H2SO4 +5 mM CuSO4. The instantaneous nucleation was observed only at the large applied potential of -1.1 V. (C) 2014 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000336880700070 |
| 公开日期 | 2014-12-08 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1664]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队 |
| 推荐引用方式 GB/T 7714 | Pan GB. Electrochemical deposition of copper on single-crystal gallium nitride(0001) electrode: nucleation and growth mechanism[J]. ELECTROCHIMICA ACTA,2014,130(0):537-542. |
| APA | Pan GB.(2014).Electrochemical deposition of copper on single-crystal gallium nitride(0001) electrode: nucleation and growth mechanism.ELECTROCHIMICA ACTA,130(0),537-542. |
| MLA | Pan GB."Electrochemical deposition of copper on single-crystal gallium nitride(0001) electrode: nucleation and growth mechanism".ELECTROCHIMICA ACTA 130.0(2014):537-542. |
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