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Mobility Enhancement in Carbon Nanotube Transistors by Screening Charge Impurity with Silica Nanoparticles

文献类型：期刊论文

作者Zhao, JW (赵建文) ; Lin, CT ; Zhang, WJ ; Xu, YP ; Lee, CW ; Chan-Park, MB ; Chen, P ; Li, LJ
刊名JOURNAL OF PHYSICAL CHEMISTRY C
出版日期2011-04-14
卷号115期号:14页码:6975-6979
通讯作者Chen, P
英文摘要Ionic surfactants have been frequently used for nanotube device fabrication owing to their high efficiency in dispersing SWNTs. Surfactants are also widely adopted for state-of-the-art density gradient ultracentrifugation- and dielectrophoresis-based nanotube separation techniques. However, the residual surfactants on nanotubes have been speculated to degrade the electrical performance of SWNT devices. Conventional methods, such as extensive washing or thermal treatment, are not able to efficiently remove the residual surfactants. In this article, we reveal that a thin layer of polydimethylsiloxane (PDMS) containing silica and ionic liquid coated on SWNT network field-effect transistors (FETs) is able to largely enhance the device mobility (about 3-4 times) and suppress their hysteresis. The enhancement in electrical properties of SWNT FETs is due to the screening of residual charges by the silica/liquid ion mixture.
收录类别SCI ; EI
语种英语
WOS记录号WOS:000289215400104
公开日期2012-08-21
源URL[http://58.210.77.100/handle/332007/531]  
专题苏州纳米技术与纳米仿生研究所_印刷电子学部_崔铮团队
推荐引用方式
GB/T 7714		 Zhao, JW ,Lin, CT,Zhang, WJ,et al. Mobility Enhancement in Carbon Nanotube Transistors by Screening Charge Impurity with Silica Nanoparticles[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2011,115(14):6975-6979.
APA Zhao, JW .,Lin, CT.,Zhang, WJ.,Xu, YP.,Lee, CW.,...&Li, LJ.(2011).Mobility Enhancement in Carbon Nanotube Transistors by Screening Charge Impurity with Silica Nanoparticles.JOURNAL OF PHYSICAL CHEMISTRY C,115(14),6975-6979.
MLA Zhao, JW ,et al."Mobility Enhancement in Carbon Nanotube Transistors by Screening Charge Impurity with Silica Nanoparticles".JOURNAL OF PHYSICAL CHEMISTRY C 115.14(2011):6975-6979.

入库方式： OAI收割

来源：苏州纳米技术与纳米仿生研究所

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