Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR
文献类型：期刊论文
| 作者 | Ma Zhenyu ; Wang Qiyuan ; Zan Yude ; Cai Tianhai ; Yu Yuanhuan ; Lin Lanying |
| 刊名 | 半导体学报
 |
| 出版日期 | 1994 |
| 卷号 | 15期号:3页码:217 |
| 英文摘要 | 于2010-11-23批量导入; zhangdi于2010-11-23 13:14:42导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:14:42z (gmt). no. of bitstreams: 1 6085.pdf: 1420674 bytes, checksum: f4a699ad988d834237dee921f2b23d5a (md5) previous issue date: 1994; 中科院半导体所 |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/19967]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma Zhenyu,Wang Qiyuan,Zan Yude,et al. Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR[J]. 半导体学报,1994,15(3):217. |
| APA | Ma Zhenyu,Wang Qiyuan,Zan Yude,Cai Tianhai,Yu Yuanhuan,&Lin Lanying.(1994).Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR.半导体学报,15(3),217. |
| MLA | Ma Zhenyu,et al."Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR".半导体学报 15.3(1994):217. |
入库方式： OAI收割
来源：半导体研究所
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