Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures
文献类型:期刊论文
作者 | Liu, Baodan ; Yang, Bing ; Yuan, Fang ; Liu, Qingyun ; Shi, Dan ; Jiang, Chunhai ; Zhang, Jinsong ; Staedler, Thorsten ; Jiang, Xin |
刊名 | NANO LETTERS
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出版日期 | 2015 |
卷号 | 15期号:12页码:7837-7846 |
关键词 | Wurtzite GaN 3C-SiC core-shell heterostructure stacking faults confined epitaxial growth |
ISSN号 | 1530-6984 |
通讯作者 | baodanliu@hotmail.com ; xjiang@imr.ac.cn |
收录类别 | SCI |
资助信息 | Knowledge Innovation Program of Institute of Metal Research [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Chinese Scholarship Council [201400260067]; National Nature Science Foundation of China [51402309]; DAAD [57054770] |
语种 | 英语 |
公开日期 | 2016-04-21 |
源URL | [http://ir.imr.ac.cn/handle/321006/74707] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Liu, Baodan,Yang, Bing,Yuan, Fang,et al. Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures[J]. NANO LETTERS,2015,15(12):7837-7846. |
APA | Liu, Baodan.,Yang, Bing.,Yuan, Fang.,Liu, Qingyun.,Shi, Dan.,...&Jiang, Xin.(2015).Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.NANO LETTERS,15(12),7837-7846. |
MLA | Liu, Baodan,et al."Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures".NANO LETTERS 15.12(2015):7837-7846. |
入库方式: OAI收割
来源:金属研究所
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