中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures

文献类型:期刊论文

作者Liu, Baodan ; Yang, Bing ; Yuan, Fang ; Liu, Qingyun ; Shi, Dan ; Jiang, Chunhai ; Zhang, Jinsong ; Staedler, Thorsten ; Jiang, Xin
刊名NANO LETTERS
出版日期2015
卷号15期号:12页码:7837-7846
关键词Wurtzite GaN 3C-SiC core-shell heterostructure stacking faults confined epitaxial growth
ISSN号1530-6984
通讯作者baodanliu@hotmail.com ; xjiang@imr.ac.cn
收录类别SCI
资助信息Knowledge Innovation Program of Institute of Metal Research [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Chinese Scholarship Council [201400260067]; National Nature Science Foundation of China [51402309]; DAAD [57054770]
语种英语
公开日期2016-04-21
源URL[http://ir.imr.ac.cn/handle/321006/74707]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Liu, Baodan,Yang, Bing,Yuan, Fang,et al. Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures[J]. NANO LETTERS,2015,15(12):7837-7846.
APA Liu, Baodan.,Yang, Bing.,Yuan, Fang.,Liu, Qingyun.,Shi, Dan.,...&Jiang, Xin.(2015).Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.NANO LETTERS,15(12),7837-7846.
MLA Liu, Baodan,et al."Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures".NANO LETTERS 15.12(2015):7837-7846.

入库方式: OAI收割

来源:金属研究所

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