中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Linear magnetoresistance versus weak antilocalization effects in Bi2Te3

文献类型:期刊论文

作者Wang, Zhenhua ; Yang, Liang ; Zhao, Xiaotian ; Zhang, Zhidong ; Gao, Xuan P. A.
刊名NANO RESEARCH
出版日期2015
卷号8期号:9页码:2963-2969
关键词linear magnetoresistance weak antilocalization Bi2Te3 films topological insulators
ISSN号1998-0124
通讯作者zhwang@imr.ac.cn ; xuan.gao@case.edu
收录类别SCI
资助信息NSF [DMR-1151534]; IMR, Chinese Academy of Sciences; National Natural Science Foundation of China [51331006]
语种英语
公开日期2016-04-21
源URL[http://ir.imr.ac.cn/handle/321006/74941]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Wang, Zhenhua,Yang, Liang,Zhao, Xiaotian,et al. Linear magnetoresistance versus weak antilocalization effects in Bi2Te3[J]. NANO RESEARCH,2015,8(9):2963-2969.
APA Wang, Zhenhua,Yang, Liang,Zhao, Xiaotian,Zhang, Zhidong,&Gao, Xuan P. A..(2015).Linear magnetoresistance versus weak antilocalization effects in Bi2Te3.NANO RESEARCH,8(9),2963-2969.
MLA Wang, Zhenhua,et al."Linear magnetoresistance versus weak antilocalization effects in Bi2Te3".NANO RESEARCH 8.9(2015):2963-2969.

入库方式: OAI收割

来源:金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。