中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration

文献类型:期刊论文

作者Sawada, Yutaka ; Seki, Shigeyuki ; Uchida, Takayuki ; Hoshi, Yoichi ; Wang, Mei-Han ; Lei, Hao ; Sun, Li-Xian
刊名PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND APPLICATIONS (ICMSA 2015)
出版日期2015
卷号3页码:719-722
关键词ITO Tin-doped In2O3 Spray chemical vapor deposition
ISSN号2352-541X
通讯作者sawada@chem.t-kougei.ac.jp ; nariyuki@sendai-nct.ac.jp ; uchida@mega.t-kougei.ac.jp ; hoshi@em.t-kougei.ac.jp ; wangmhdicp@aliyun.com ; haolei@imr.ac.cn ; sunlx@guet.edu.cn
收录类别SCI
语种英语
公开日期2016-04-21
源URL[http://ir.imr.ac.cn/handle/321006/74947]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Sawada, Yutaka,Seki, Shigeyuki,Uchida, Takayuki,et al. Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration[J]. PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND APPLICATIONS (ICMSA 2015),2015,3:719-722.
APA Sawada, Yutaka.,Seki, Shigeyuki.,Uchida, Takayuki.,Hoshi, Yoichi.,Wang, Mei-Han.,...&Sun, Li-Xian.(2015).Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration.PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND APPLICATIONS (ICMSA 2015),3,719-722.
MLA Sawada, Yutaka,et al."Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration".PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND APPLICATIONS (ICMSA 2015) 3(2015):719-722.

入库方式: OAI收割

来源:金属研究所

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