Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures
文献类型：期刊论文
| 作者 | Han, Yu ; Wu, Zefei ; Xu, Shuigang ; Chen, Xiaolong ; Wang, Lin ; Wang, Yang ; Xiong, Wei ; Han, Tianyi ; Ye, Weiguang ; Lin, Jiangxiazi ; Cai, Yuan ; Ho, Kin Ming ; He, Yuheng ; Su, Dangsheng ; Wang, Ning |
| 刊名 | ADVANCED MATERIALS INTERFACES
 |
| 出版日期 | 2015 |
| 卷号 | 2期号:8页码:- |
| 关键词 | defects graphene heterostructure midgap states MoS2 quantum capacitance |
| ISSN号 | 2196-7350 |
| 通讯作者 | phwang@ust.hk |
| 收录类别 | SCI |
| 资助信息 | Research Grants Council of Hong Kong [N_HKUST613/12, 604112, HKU9/CRF/13G, HKUST9/CRF/08]; Research Grants Council of Hong Kong (HKUST-SRFI); Raith-HKUST Nanotechnology Laboratory [SEG_HKUST08] |
| 语种 | 英语 |
| 公开日期 | 2016-04-21 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/75079]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Han, Yu,Wu, Zefei,Xu, Shuigang,et al. Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures[J]. ADVANCED MATERIALS INTERFACES,2015,2(8):-. |
| APA | Han, Yu.,Wu, Zefei.,Xu, Shuigang.,Chen, Xiaolong.,Wang, Lin.,...&Wang, Ning.(2015).Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures.ADVANCED MATERIALS INTERFACES,2(8),-. |
| MLA | Han, Yu,et al."Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures".ADVANCED MATERIALS INTERFACES 2.8(2015):-. |
入库方式： OAI收割
来源：金属研究所
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