Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe
文献类型：期刊论文
| 作者 | Yang, Wenjin ; Liu, Baodan ; Yang, Bing ; Wang, Jianyu ; Sekiguchi, Takashi ; Thorsten, Staedler ; Jiang, Xin |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2015 |
| 卷号 | 25期号:17页码:2543-2551 |
| ISSN号 | 1616-301X |
| 通讯作者 | baodanliu@imr.ac.cn ; xjiang@imr.ac.cn |
| 收录类别 | SCI |
| 资助信息 | Knowledge Innovation Program of Institute of Metal Research (IMR), Chinese Academy of Science (CAS) [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Chinese Scholarship Council [201400260067]; DAAD [57054770] |
| 语种 | 英语 |
| 公开日期 | 2016-04-21 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/75083]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Yang, Wenjin,Liu, Baodan,Yang, Bing,et al. Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe[J]. ADVANCED FUNCTIONAL MATERIALS,2015,25(17):2543-2551. |
| APA | Yang, Wenjin.,Liu, Baodan.,Yang, Bing.,Wang, Jianyu.,Sekiguchi, Takashi.,...&Jiang, Xin.(2015).Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe.ADVANCED FUNCTIONAL MATERIALS,25(17),2543-2551. |
| MLA | Yang, Wenjin,et al."Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe".ADVANCED FUNCTIONAL MATERIALS 25.17(2015):2543-2551. |
入库方式： OAI收割
来源：金属研究所
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