Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating
文献类型：期刊论文
| 作者 | Li, Yang ; Xu, Cheng-Yan ; Qin, Jing-Kai ; Feng, Wei ; Wang, Jia-Ying ; Zhang, Siqi ; Ma, Lai-Peng ; Cao, Jian ; Hu, Ping An ; Ren, Wencai ; Zhen, Liang |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2016 |
| 卷号 | 26期号:2页码:293-302 |
| 关键词 | heterostructures excitons Schottky barriers self-assembled monolayers |
| ISSN号 | 1616-301X |
| 通讯作者 | cy_xu@hit.edu.cn ; lzhen@hit.edu.cn |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [51572057]; State Key Laboratory of Advanced Welding and Joining [AWJ-M15-11]; National Basic Research Program of China [2012CB934102]; Ministry of Science and Technology of China [2012AA030303]; Fundamental Research Funds for the Central Universities [HIT.BRETIII.201203]; Lam Research Corp |
| 语种 | 英语 |
| 公开日期 | 2016-04-21 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/75226]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Li, Yang,Xu, Cheng-Yan,Qin, Jing-Kai,et al. Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating[J]. ADVANCED FUNCTIONAL MATERIALS,2016,26(2):293-302. |
| APA | Li, Yang.,Xu, Cheng-Yan.,Qin, Jing-Kai.,Feng, Wei.,Wang, Jia-Ying.,...&Zhen, Liang.(2016).Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating.ADVANCED FUNCTIONAL MATERIALS,26(2),293-302. |
| MLA | Li, Yang,et al."Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating".ADVANCED FUNCTIONAL MATERIALS 26.2(2016):293-302. |
入库方式： OAI收割
来源：金属研究所
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