Intervalley Г-X deformation potentials in III-V zincblende and si senic-conductors by Ab Inition pseudopotential calculations
文献类型：期刊论文
| 作者 | Wang Jianqing ; Gu Zongquan ; Li Mingfu ; Lai Wuyan |
| 刊名 | Communications in Theoretical Physics
 |
| 出版日期 | 1993 |
| 卷号 | 20期号:2页码:159 |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20153]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Jianqing,Gu Zongquan,Li Mingfu,et al. Intervalley Г-X deformation potentials in III-V zincblende and si senic-conductors by Ab Inition pseudopotential calculations[J]. Communications in Theoretical Physics,1993,20(2):159. |
| APA | Wang Jianqing,Gu Zongquan,Li Mingfu,&Lai Wuyan.(1993).Intervalley Г-X deformation potentials in III-V zincblende and si senic-conductors by Ab Inition pseudopotential calculations.Communications in Theoretical Physics,20(2),159. |
| MLA | Wang Jianqing,et al."Intervalley Г-X deformation potentials in III-V zincblende and si senic-conductors by Ab Inition pseudopotential calculations".Communications in Theoretical Physics 20.2(1993):159. |
入库方式： OAI收割
来源：半导体研究所
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