Single steady frequency and narrow line width external cavity semiconductor laser
文献类型：会议论文
| 作者 | Zhao WR ; Jiang PF ; Xie FZ |
| 出版日期 | 2003 |
| 会议名称 | conference on advanced characterization techniques for optics semiconductors and nanotechnologies |
| 会议日期 | aug 03-05, 2003 |
| 会议地点 | san diego, ca |
| 关键词 | external cavity semiconductor laser light feedback single longitudinal mode spectral line width FEEDBACK DIODE |
| 页码 | 389-393 |
| 通讯作者 | zhao wr chinese acad sci inst semicond beijing 100083 peoples r china. |
| 中文摘要 | a single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. it is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. the one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. the flame grating is used as light feedback element to select the mode of the semiconductor laser. the temperature of the constructed external cavity semiconductor laser is stabilized in order of 10(-3)degreesc by temperature control system. the experiments have been carried out and the results obtained-the spectral fine width of this laser is compressed to be less than 1.4mhz from its original line-width of more than 1200ghz and the output stability (including power and mode) is remarkably enhanced. |
| 英文摘要 | a single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. it is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. the one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. the flame grating is used as light feedback element to select the mode of the semiconductor laser. the temperature of the constructed external cavity semiconductor laser is stabilized in order of 10(-3)degreesc by temperature control system. the experiments have been carried out and the results obtained-the spectral fine width of this laser is compressed to be less than 1.4mhz from its original line-width of more than 1200ghz and the output stability (including power and mode) is remarkably enhanced.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:16z (gmt). no. of bitstreams: 1 2766.pdf: 281776 bytes, checksum: a7ee94ab9831035c3b46cda1515350b1 (md5) previous issue date: 2003; spie.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie. |
| 会议录 | advanced characterization techniques for optics, semiconductors, and nanotechnologies, 5188
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 半导体器件 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-5061-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13565]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao WR,Jiang PF,Xie FZ. Single steady frequency and narrow line width external cavity semiconductor laser[C]. 见:conference on advanced characterization techniques for optics semiconductors and nanotechnologies. san diego, ca. aug 03-05, 2003. |
入库方式： OAI收割
来源：半导体研究所
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