Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
文献类型:会议论文
作者 | Ying-Qiang X ; Zhang W ; Niu ZC ; Wu RG ; Wang QM |
出版日期 | 2004 |
会议名称 | asia-pacific optical and wireless communications conference (apoc 2003) |
会议日期 | nov 04-06, 2003 |
会议地点 | wuhan, peoples r china |
关键词 | GaNAs SiO2 encapsulation rapid-thermal-annealing nitrogen reorganization MOLECULAR-BEAM EPITAXY OPTICAL-PROPERTIES MU-M |
页码 | 594-599 |
通讯作者 | ying-qiang x chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. |
中文摘要 | effects of sio2, encapsulation and rapid thermal annealing (rta) on the optical properties of ganas/gaas single quantum well (sqw) were studied by low temperature photoluminescence (pl). a blueshift of the pl peak energy for both the sio2-capped region and the bare region was observed. the results were attributed to the nitrogen reorganization in the ganas/gaas sqw. it was also shown that the nitrogen reorganization was obviously enhanced by sio2 cap-layer. a simple model [1] was used to describe the sio2-enhanced blueshift of the low temperature pl peak energy. |
英文摘要 | effects of sio2, encapsulation and rapid thermal annealing (rta) on the optical properties of ganas/gaas single quantum well (sqw) were studied by low temperature photoluminescence (pl). a blueshift of the pl peak energy for both the sio2-capped region and the bare region was observed. the results were attributed to the nitrogen reorganization in the ganas/gaas sqw. it was also shown that the nitrogen reorganization was obviously enhanced by sio2 cap-layer. a simple model [1] was used to describe the sio2-enhanced blueshift of the low temperature pl peak energy.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:19z (gmt). no. of bitstreams: 1 2774.pdf: 77117 bytes, checksum: 56439cd109ff1b494cc3109b694a8a6c (md5) previous issue date: 2004; spie.; chinese opt soc.; wuhan municipal govt.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议主办者 | spie.; chinese opt soc.; wuhan municipal govt. |
会议录 | apoc 2003:asia-pacific optical and wireless communications; materials, active devices, and optical amplifiers, pts 1 and 2, 5280
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会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
学科主题 | 半导体物理 |
会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
语种 | 英语 |
ISSN号 | 0277-786x |
ISBN号 | 0-8194-5175-4 |
源URL | [http://ir.semi.ac.cn/handle/172111/13581] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Ying-Qiang X,Zhang W,Niu ZC,et al. Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well[C]. 见:asia-pacific optical and wireless communications conference (apoc 2003). wuhan, peoples r china. nov 04-06, 2003. |
入库方式: OAI收割
来源:半导体研究所
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