中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well

文献类型:会议论文

作者Ying-Qiang X ; Zhang W ; Niu ZC ; Wu RG ; Wang QM
出版日期2004
会议名称asia-pacific optical and wireless communications conference (apoc 2003)
会议日期nov 04-06, 2003
会议地点wuhan, peoples r china
关键词GaNAs SiO2 encapsulation rapid-thermal-annealing nitrogen reorganization MOLECULAR-BEAM EPITAXY OPTICAL-PROPERTIES MU-M
页码594-599
通讯作者ying-qiang x chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china.
中文摘要effects of sio2, encapsulation and rapid thermal annealing (rta) on the optical properties of ganas/gaas single quantum well (sqw) were studied by low temperature photoluminescence (pl). a blueshift of the pl peak energy for both the sio2-capped region and the bare region was observed. the results were attributed to the nitrogen reorganization in the ganas/gaas sqw. it was also shown that the nitrogen reorganization was obviously enhanced by sio2 cap-layer. a simple model [1] was used to describe the sio2-enhanced blueshift of the low temperature pl peak energy.
英文摘要effects of sio2, encapsulation and rapid thermal annealing (rta) on the optical properties of ganas/gaas single quantum well (sqw) were studied by low temperature photoluminescence (pl). a blueshift of the pl peak energy for both the sio2-capped region and the bare region was observed. the results were attributed to the nitrogen reorganization in the ganas/gaas sqw. it was also shown that the nitrogen reorganization was obviously enhanced by sio2 cap-layer. a simple model [1] was used to describe the sio2-enhanced blueshift of the low temperature pl peak energy.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:19z (gmt). no. of bitstreams: 1 2774.pdf: 77117 bytes, checksum: 56439cd109ff1b494cc3109b694a8a6c (md5) previous issue date: 2004; spie.; chinese opt soc.; wuhan municipal govt.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别CPCI-S
会议主办者spie.; chinese opt soc.; wuhan municipal govt.
会议录apoc 2003:asia-pacific optical and wireless communications; materials, active devices, and optical amplifiers, pts 1 and 2, 5280
会议录出版者spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题半导体物理
会议录出版地1000 20th st, po box 10, bellingham, wa 98227-0010 usa
语种英语
ISSN号0277-786x
ISBN号0-8194-5175-4
源URL[http://ir.semi.ac.cn/handle/172111/13581]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Ying-Qiang X,Zhang W,Niu ZC,et al. Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well[C]. 见:asia-pacific optical and wireless communications conference (apoc 2003). wuhan, peoples r china. nov 04-06, 2003.

入库方式: OAI收割

来源:半导体研究所

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