Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
文献类型：会议论文
| 作者 | Ying-Qiang X ; Zhang W ; Niu ZC ; Wu RG ; Wang QM |
| 出版日期 | 2004 |
| 会议名称 | asia-pacific optical and wireless communications conference (apoc 2003) |
| 会议日期 | nov 04-06, 2003 |
| 会议地点 | wuhan, peoples r china |
| 关键词 | GaNAs SiO2 encapsulation rapid-thermal-annealing nitrogen reorganization MOLECULAR-BEAM EPITAXY OPTICAL-PROPERTIES MU-M |
| 页码 | 594-599 |
| 通讯作者 | ying-qiang x chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. |
| 中文摘要 | effects of sio2, encapsulation and rapid thermal annealing (rta) on the optical properties of ganas/gaas single quantum well (sqw) were studied by low temperature photoluminescence (pl). a blueshift of the pl peak energy for both the sio2-capped region and the bare region was observed. the results were attributed to the nitrogen reorganization in the ganas/gaas sqw. it was also shown that the nitrogen reorganization was obviously enhanced by sio2 cap-layer. a simple model [1] was used to describe the sio2-enhanced blueshift of the low temperature pl peak energy. |
| 英文摘要 | effects of sio2, encapsulation and rapid thermal annealing (rta) on the optical properties of ganas/gaas single quantum well (sqw) were studied by low temperature photoluminescence (pl). a blueshift of the pl peak energy for both the sio2-capped region and the bare region was observed. the results were attributed to the nitrogen reorganization in the ganas/gaas sqw. it was also shown that the nitrogen reorganization was obviously enhanced by sio2 cap-layer. a simple model [1] was used to describe the sio2-enhanced blueshift of the low temperature pl peak energy.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:19z (gmt). no. of bitstreams: 1 2774.pdf: 77117 bytes, checksum: 56439cd109ff1b494cc3109b694a8a6c (md5) previous issue date: 2004; spie.; chinese opt soc.; wuhan municipal govt.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc.; wuhan municipal govt. |
| 会议录 | apoc 2003:asia-pacific optical and wireless communications; materials, active devices, and optical amplifiers, pts 1 and 2, 5280
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 半导体物理 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 0-8194-5175-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13581]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ying-Qiang X,Zhang W,Niu ZC,et al. Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well[C]. 见:asia-pacific optical and wireless communications conference (apoc 2003). wuhan, peoples r china. nov 04-06, 2003. |
入库方式： OAI收割
来源：半导体研究所
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