Annealing ambient controlled deep defect formation in InP
文献类型：会议论文
| 作者 | Zhao YW ; Dong ZY ; Duan ML ; Sun WR ; Zeng YP ; Sun NF ; Sun TN |
| 出版日期 | 2004 |
| 会议名称 | 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10) |
| 会议日期 | sep 29-oct 02, 2003 |
| 会议地点 | batz sur mer, france |
| 关键词 | FE-DOPED INP SEMIINSULATING INP POINT-DEFECTS PRESSURE WAFERS TRAPS |
| 页码 | 167-169 |
| 通讯作者 | zhao yw chinese acad sci inst semicond ctr mat sci pob 912 beijing 100083 peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.nc |
| 中文摘要 | deep defects in annealed inp have been investigated by deep level transient capacitance spectroscopy (dlts), photo induced current transient spectroscopy (picts) and thermally stimulated current spectroscopy (tsc). both dlts results of annealed semiconducting inp and picts and tsc results of annealed semi-insulating inp indicate that inp annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. the correlation of the defects and the nature of the defects in annealed inp are discussed based on the results. |
| 英文摘要 | deep defects in annealed inp have been investigated by deep level transient capacitance spectroscopy (dlts), photo induced current transient spectroscopy (picts) and thermally stimulated current spectroscopy (tsc). both dlts results of annealed semiconducting inp and picts and tsc results of annealed semi-insulating inp indicate that inp annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. the correlation of the defects and the nature of the defects in annealed inp are discussed based on the results.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:21z (gmt). no. of bitstreams: 1 2777.pdf: 191261 bytes, checksum: 6019efcb4e6be07894f6000ed8905b2f (md5) previous issue date: 2004; chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; hebei semicond res inst, shijiazhuang 050051, hebei, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | european physical journal-applied physics, 27 (1-3)
 |
| 会议录出版者 | e d p sciences ; 17, ave du hoggar, pa courtaboeuf, bp 112, f-91944 les ulis cedex a, france |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 17, ave du hoggar, pa courtaboeuf, bp 112, f-91944 les ulis cedex a, france |
| 语种 | 英语 |
| ISSN号 | 1286-0042 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13587]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao YW,Dong ZY,Duan ML,et al. Annealing ambient controlled deep defect formation in InP[C]. 见:10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10). batz sur mer, france. sep 29-oct 02, 2003. |
入库方式： OAI收割
来源：半导体研究所
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