Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
文献类型：会议论文
| 作者 | Ye XL ; Xu B
|
| 出版日期 | 2004 |
| 会议名称 | 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10) |
| 会议日期 | sep 29-oct 02, 2003 |
| 会议地点 | batz sur mer, france |
| 关键词 | SHORT-PERIOD SUPERLATTICES RAMAN-SCATTERING QUANTUM-WELLS GROWTH ROUGHNESS SEGREGATION ALAS/GAAS ALAS GAAS |
| 页码 | 297-300 |
| 通讯作者 | ye xl chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. 电子邮箱地址: xlye@red.semi.ac.cn |
| 中文摘要 | the in-plane optical anisotropy of several gaas/algaas quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (rds). the rds line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1hh-->1e and 1lh-->1e transition. as the well width is decreased, or the 1 ml inas layer is inserted at one interface, the intensity of the anisotropy increases quickly. our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. the results demonstrate that the rds technique is sensitive to the interface structures. |
| 英文摘要 | the in-plane optical anisotropy of several gaas/algaas quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (rds). the rds line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1hh-->1e and 1lh-->1e transition. as the well width is decreased, or the 1 ml inas layer is inserted at one interface, the intensity of the anisotropy increases quickly. our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. the results demonstrate that the rds technique is sensitive to the interface structures.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:21z (gmt). no. of bitstreams: 1 2778.pdf: 217022 bytes, checksum: 8ad662b70b390732c0c4ad1e8cca01a2 (md5) previous issue date: 2004; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | european physical journal-applied physics, 27 (1-3)
 |
| 会议录出版者 | e d p sciences ; 17, ave du hoggar, pa courtaboeuf, bp 112, f-91944 les ulis cedex a, france |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 17, ave du hoggar, pa courtaboeuf, bp 112, f-91944 les ulis cedex a, france |
| 语种 | 英语 |
| ISSN号 | 1286-0042 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13589]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL,Xu B. Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy[C]. 见:10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10). batz sur mer, france. sep 29-oct 02, 2003. |
入库方式： OAI收割
来源：半导体研究所
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