Characterization of polymorphous silicon thin film and solar cells
文献类型：会议论文
| 作者 | Zhang S ; Xu Y ; Liao X ; Martins R ; Fortunato E ; Hu Z ; Kong G |
| 出版日期 | 2004 |
| 会议名称 | 2nd international materials symposium |
| 会议日期 | apr 14-16, 2003 |
| 会议地点 | caparica, portugal |
| 关键词 | polymorphous silicon thin film solar cell |
| 页码 | 77-80 |
| 通讯作者 | zhang s chinese acad sci inst semicond state key lab surface phys beijing 100083 peoples r china. 电子邮箱地址: sz@uninova.pt |
| 中文摘要 | polymorphous silicon (pm-si:h) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. comparing to the conventional amorphous silicon (a-si:h), the pm-si:h has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. it can be found from raman spectra that there is a notable improvement in the medium range order. there are a blue shift for the stretching mode of ir spectra and a red shift for the wagging mode. the shifts are attributed to the variation of the microstructure. by using pm-si:h film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (am1.5, 100mw/cm(2)) at room temperature (t-r). |
| 收录类别 | CPCI-S |
| 会议主办者 | portuguese mat soc.; portuguese sci fdn.; calouste gulbenkian fdn.; luso amer fdn. |
| 会议录 | advanced materials forum ii, 455-456
 |
| 会议录出版者 | trans tech publications ltd ; brandrain 6, ch-8707 zurich-uetikon, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | brandrain 6, ch-8707 zurich-uetikon, switzerland |
| 语种 | 英语 |
| ISSN号 | 0255-5476 |
| ISBN号 | 0-87849-941-5 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13595]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang S,Xu Y,Liao X,et al. Characterization of polymorphous silicon thin film and solar cells[C]. 见:2nd international materials symposium. caparica, portugal. apr 14-16, 2003. |
入库方式： OAI收割
来源：半导体研究所
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