Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
文献类型：会议论文
| 作者 | Leung BH ; Fong WK ; Surya C ; Lu LW ; Ge WK |
| 出版日期 | 2003 |
| 会议名称 | 1st international symposium on point defect and stoichiometry |
| 会议日期 | mar 20-22, 2003 |
| 会议地点 | sendai, japan |
| 关键词 | GaN low-frequency noise deep levels deep level transient Fourier spectroscopy DEVICES |
| 页码 | 523-525 |
| 通讯作者 | surya c hong kong polytech univ photon res ctr dept elect & informat engn hong kong hong kong peoples r china. 电子邮箱地址: ensurya@polyu.edu.hk |
| 中文摘要 | metal-semiconductor-metal (msm) structures were fabricated by rf-plasma-assisted mbe using different buffer layer structures. one type of buffer structure consists of an aln high-temperature buffer layer (htbl) and a gan intermediate temperature buffer layer (itbl), another buffer structure consists of just a single a in htbl. systematic measurements in the flicker noise and deep level transient fourier spectroscopy (dltfs) measurements were used to characterize the defect properties in the films. both the noise and dltfs measurements indicate improved properties for devices fabricated with the use of itbl and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (c) 2003 elsevier ltd. all rights reserved. |
| 英文摘要 | metal-semiconductor-metal (msm) structures were fabricated by rf-plasma-assisted mbe using different buffer layer structures. one type of buffer structure consists of an aln high-temperature buffer layer (htbl) and a gan intermediate temperature buffer layer (itbl), another buffer structure consists of just a single a in htbl. systematic measurements in the flicker noise and deep level transient fourier spectroscopy (dltfs) measurements were used to characterize the defect properties in the films. both the noise and dltfs measurements indicate improved properties for devices fabricated with the use of itbl and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (c) 2003 elsevier ltd. all rights reserved.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:24z (gmt). no. of bitstreams: 1 2789.pdf: 195768 bytes, checksum: a9eaecdd911efbd2df390973f1c376a0 (md5) previous issue date: 2003; hong kong polytech univ, photon res ctr, dept elect & informat engn, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, hong kong, hong kong, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | materials science in semiconductor processing, 6 (5-6)
 |
| 会议录出版者 | elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 学科主题 | 半导体物理 |
| 会议录出版地 | the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
| 语种 | 英语 |
| ISSN号 | 1369-8001 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13601]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Leung BH,Fong WK,Surya C,et al. Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers[C]. 见:1st international symposium on point defect and stoichiometry. sendai, japan. mar 20-22, 2003. |
入库方式： OAI收割
来源：半导体研究所
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