中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Defects in GaSb studied by coincidence Doppler broadening measurements

文献类型:会议论文

作者Hu WG ; Wang Z ; Dai YQ ; Wang SJ ; Zhao YW
出版日期2004
会议名称13th international conference on positron annihilation (icpa-13)
会议日期sep 07-12, 2003
会议地点kyoto, japan
关键词coincidence Doppler broadening defects GaSb positron annihilation
页码114-116
通讯作者hu wg wuhan univ dept phys wuhan 430072 peoples r china. 电子邮箱地址: wangz@whu.edu.cn
中文摘要undoped, zn-doped and te-doped gasb with different concentrations were investigated by positron lifetime spectroscopy (pas) and the doppler broadening technique. detection sensitivity of the latter technique was improved by using a second ge-detector for the coincident detection of the second annihilation photon. pas measurement indicated that there were vacancies in these samples. by combining the doppler broadening measurements, the native acceptor defects in gasb were identified to be predominantly ga vacancy (v-ga) related defects.
收录类别CPCI-S
会议主办者commemorat assoc japan world exposit (1970).; res fdn mat sci.; sci council japan.; phys soc japan.; japan soc appl phys.; chem soc japan.; japanese soc radiat chem.; japan radioisotope assoc.
会议录positron annihilation, icpa-13, proceedings, 445-6
会议录出版者trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland
学科主题半导体材料
会议录出版地laublsrutistr 24, ch-8717 stafa-zurich, switzerland
语种英语
ISSN号0255-5476
ISBN号0-87849-936-9
源URL[http://ir.semi.ac.cn/handle/172111/13605]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Hu WG,Wang Z,Dai YQ,et al. Defects in GaSb studied by coincidence Doppler broadening measurements[C]. 见:13th international conference on positron annihilation (icpa-13). kyoto, japan. sep 07-12, 2003.

入库方式: OAI收割

来源:半导体研究所

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