Defects in GaSb studied by coincidence Doppler broadening measurements
文献类型:会议论文
作者 | Hu WG ; Wang Z ; Dai YQ ; Wang SJ ; Zhao YW |
出版日期 | 2004 |
会议名称 | 13th international conference on positron annihilation (icpa-13) |
会议日期 | sep 07-12, 2003 |
会议地点 | kyoto, japan |
关键词 | coincidence Doppler broadening defects GaSb positron annihilation |
页码 | 114-116 |
通讯作者 | hu wg wuhan univ dept phys wuhan 430072 peoples r china. 电子邮箱地址: wangz@whu.edu.cn |
中文摘要 | undoped, zn-doped and te-doped gasb with different concentrations were investigated by positron lifetime spectroscopy (pas) and the doppler broadening technique. detection sensitivity of the latter technique was improved by using a second ge-detector for the coincident detection of the second annihilation photon. pas measurement indicated that there were vacancies in these samples. by combining the doppler broadening measurements, the native acceptor defects in gasb were identified to be predominantly ga vacancy (v-ga) related defects. |
收录类别 | CPCI-S |
会议主办者 | commemorat assoc japan world exposit (1970).; res fdn mat sci.; sci council japan.; phys soc japan.; japan soc appl phys.; chem soc japan.; japanese soc radiat chem.; japan radioisotope assoc. |
会议录 | positron annihilation, icpa-13, proceedings, 445-6 |
会议录出版者 | trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
学科主题 | 半导体材料 |
会议录出版地 | laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
语种 | 英语 |
ISSN号 | 0255-5476 |
ISBN号 | 0-87849-936-9 |
源URL | [http://ir.semi.ac.cn/handle/172111/13605] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Hu WG,Wang Z,Dai YQ,et al. Defects in GaSb studied by coincidence Doppler broadening measurements[C]. 见:13th international conference on positron annihilation (icpa-13). kyoto, japan. sep 07-12, 2003. |
入库方式: OAI收割
来源:半导体研究所
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